Subscript[CuInP, 2] Subscript[S, 6] plates with surface screening
Author
Eugene Eliseev, Anna Morozovska
Title
Subscript[CuInP, 2] Subscript[S, 6] plates with surface screening
Description
code used to perform numerical and analytical calculations, presented in ArXive publication https://doi.org/10.48550/arXiv.2406.13051
Category
Academic Articles & Supplements
Keywords
negative capacitance, ferroelectric layers, field-effect transistors
URL
http://www.notebookarchive.org/2024-06-bhmuw2b/
DOI
https://notebookarchive.org/2024-06-bhmuw2b
Date Added
2024-06-25
Date Last Modified
2024-06-25
File Size
433.08 kilobytes
Supplements
Rights
CC BY 4.0



This file contains supplementary data for Anna N. Morozovska, Eugene A. Eliseev, Yulian M. Vysochanskii, Sergei V. Kalinin, Maksym V. Strikha, “Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field-Effect Transistors.” https://doi.org/10.48550/arXiv.2406.13051.
CuInP2S6 plates with surface screening
CuInP
2
S
6
Eugene A. Eliseev and Anna N. Morozovska
Analytical calculations corroborated by the finite element modelling show that thin films of Van der Waals ferrielectrics covered by a 2D-semiconductor are promising candidates for the controllable reduction of the dielectric layer capacitance due to the negative capacitance (NC) effect emerging in the thin films. The NC state is conditioned by energy-degenerated poly-domain states of the ferrielectric polarization induced in the films under incomplete screening conditions in the presence of a dielectric layer. Calculations performed for the FET-type heterostructure “ferrielectric CuInP2S6 film - 2D-MoS2 single-layer - SiO2 dielectric layer” reveal the pronounced size effect of the multilayer capacitance. Derived analytical expressions for the electric polarization and multilayer capacitance allow to predict the thickness range of the dielectric layer and ferrielectric film for which the NC effect is the most pronounced in various Van der Waals ferrielectrics, and the corresponding subthreshold swing becomes much less than the Boltzmann’s limit.
Parameters+Definitions
Parameters+Definitions
Fundamental&&Materials parameters +++
Fundamental&&Materials parameters +++
Function “staticLGDdw2468” definition
Function “staticLGDdw2468” definition
Permissable values of the argument “slct”
Permissable values of the argument “slct”
Figures
Figures
Distribution of potential vs T and h
Distribution of potential vs T and h
Interface potential dependence on d and h: main text
Interface potential dependence on d and h: main text
Dcr(h) at T=293 K
D
cr
Static capacitance vs d and h: main text
Static capacitance vs d and h: main text
Static capacitance vs d and h: supplement
Static capacitance vs d and h: supplement
Static capacitance vs T and λ
Static capacitance vs T and λ
Static capacitance vs T and λ: supplement
Static capacitance vs T and λ: supplement


Cite this as: Eugene Eliseev, Anna Morozovska, "Subscript[CuInP, 2] Subscript[S, 6] plates with surface screening" from the Notebook Archive (2024), https://notebookarchive.org/2024-06-bhmuw2b

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